特博科技有限公司是英国ICEMOSTECH公司在中国的  代理，   的SOI wafer和 
SuperJunction MOSFET是ICEMOS的主营产品，凭借15年的制造经验ICEMOS在世界范围内有着
众多的客户群体，分别在欧洲，美国，日本、韩国和中东设有代理商。


SOI wafer尺寸: 4”(100mm）, 5”（125mm）, 6”（150mm） and  8"（200mm）
SOI Spec. 规格：
     1-    Bonded SOI wafer (绝缘硅上键合硅片）
                          For 4”(100mm）, 5”（125mm）, 6”（150mm）
                     ---- Handle wafer minimum 300um maximum 1000um, 
                     ---- Buried Oxide, minimum 0.1 um, maximum 4 um, 
                     ---- Device layer minimum 2 um, max 500 um. 
                         
                          For 8"（200mm）
                     ---- Handle thickness minimum 500um and maximum 675um, 
                     ---- Buried Oxide minimum 0.1 um, maximum 4 um,
                     ---- Device layer minimum 5 um, maximum 500 um.
 
2-       Si-Si direct wafer bonding (replacement for epi) 硅-硅直接键合，可替代外延片
 
      100mm, 125mm, 150mm and 200mm, thickness as specified above.
 
3-       Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation), 
      Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.)
      and finally Through Silicon Via (TSV)   
 
 ----  Cavity SOI - Bonded SOI or Silicon silicon DWB wafers with cavities performed within the wafer 
 ---- Multiple SOI 2 or 3 or more layers of SOI designed around your process 
 ---- Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated 
  
     4-     SOI + Trench & Refill
  
   Features
？	Significant die shrink compared to conventional dielectric isolation 
     (DI) or junction isolation 
？	Bulk quality     silicon layer 
？	Total device-to-device isolation 
？	Lower substrate capacitance than bulk 
？	Fully flexible specification on SOI, Trench and refill parameters
5-   Superjunction MOSFET
 
 
 
  
    为了一些客户的紧急需求，英国工厂存有部分现货，欢迎您来电咨询 详细的产品信息！